| PART |
Description |
Maker |
| CY7C1062DV33-10BGIT CY7C1062DV33-10BGXI CY7C1062DV |
16-Mbit (512 K 32) Static RAM
|
Cypress
|
| CY62148ESL-55ZAXAT CY62148ESL-55ZAXI CY62148ESL-55 |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY62157EV18 |
8-Mbit (512 K x 16) Static RAM
|
Cypress Semiconductor
|
| UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| BB4EG BB4GK BB4KLX BB4JKX BB4DF BB4NPX |
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL® 32-Mbit (2M x 16) Static RAM
MoBL® 16-Mbit (1M x 16) Static RAM
＂SHIELDING BAG 16 X 18＂＂ Inhalt pro Packung: 10 Stk. “屏蔽袋16 X 18”，“Inhalt亲Packung0沙头角。
|
ON Semiconductor
|
| CY62157ELL-45ZSXI CY62157ELL-55BVXE |
8-Mbit (512 K x 16) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| CY7C1049D-10VXI CY7C1049D11 |
4-Mbit (512 K × 8) Static RAM TTL-compatible inputs and outputs
|
Cypress Semiconductor
|
| SST4117A SST4118A |
1-Mb (128K x 8) Static RAM
1-Mbit (64K x 16) Static RAM 晶体管|场效应| N沟道| 80uA电流我（直）| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|
| Y51-03 Y51-02 Y21-01 Y31-01 Y41-03 Y61-03 Y21-02 Y |
VALVE STARTUP 3/8 阀门启8
VALVE SHUT OFF 1/8 阀门关闭了1 / 8
VALVE STARTUP 1/2 阀门启 / 2
VALVE SHUT OFF 1/4 阀门关闭了1 / 4
VALVE SHUT OFF 3/4
VALVE STARTUP 1/4
IC SRAM 512KX36 2.5V SYN 100TQFP
VALVE SHUT OFF 1/2
BRACKET T
1-Mbit (128K x 8) Static RAM
IC MCU 8K FULL SPEED USB 28SDIP
BRACKET L
1M/512K FAST ASYNC SRAM
5V, 3.3V, ISR™ High-Performance CPLDs
256K (32K x 8) Static RAM
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
SPACER
EZ-USB FX2LP™ USB Microcontroller High-Speed USB Peripheral Controller
1-Mbit (64K x 16) Static RAM
2M x 8 Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture
BRANCH UNIT
|
AMIC Technology, Corp.
Vishay Intertechnology, Inc.
NXP Semiconductors N.V.
Harwin PLC
|
| AM41DL6408G25IS AM41DL6408G25IT AM41DL6408G45IS AM |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 64兆位米8 4x 16位）.0伏的CMOS只，同时作业闪存兆位 M中的x 8-Bit/512x 16位），静态存储器
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM 64兆位米8 4米x 16位）.0伏的CMOS只，同时作业闪存兆位 M中的x 8-Bit/512亩x 16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
